US Patent 9418739 Memory devices and methods of operating the same

Methods of operating a memory device include; applying a first set write voltage to a selected first signal line connected to a selected memory cell, applying a first inhibition voltage to non-selected first signal lines connected to non-selected memory cells, and controlling a first voltage of a selected second signal line connected to the selected memory cell to be less than the first set write voltage, and a difference between the first inhibition voltage and the first voltage is less than a threshold voltage of the selection element.