Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshitaka Watanabe0
Yuichi Minoura0
Date of Patent
August 23, 2016
Patent Application Number
14010824
Date Filed
August 27, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A compound semiconductor device includes: a compound semiconductor layered structure; a gate electrode formed above the compound semiconductor layered structure; a first protective insulating film that covers a surface of the compound semiconductor layered structure and is made of silicon nitride as a material; a second protective insulating film that covers the gate electrode on the first protective insulating film and is made of silicon oxide as a material; and a third protective insulating film that contains silicon oxynitride and is formed between the first protective insulating film and the second protective insulating film.
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