Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Fumitake Mieno0
Date of Patent
August 23, 2016
0Patent Application Number
145029120
Date Filed
September 30, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor fin on a substrate. The semiconductor fin includes a stack of alternating layers of first and second materials that induce stress or strain to the channel of the semiconductor device for implementing a strained FinFET. The first and second materials are different. The second material layers include lateral recesses filled with an insulating layer to form an isolated FinFET structure to further induce stress in the channel region to improve the performance of the semiconductor device.
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