Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Dong-Kyun Kang0
Date of Patent
September 20, 2016
0Patent Application Number
143262050
Date Filed
July 8, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating a transistor that includes forming a trench in a substrate, forming a gate dielectric layer on a surface of the trench, forming a first fluorine-free tungsten layer as an interface stabilization layer over the gate dielectric layer, forming a second fluorine-free tungsten layer as a barrier layer over the first fluorine-free tungsten layer, forming a bulk tungsten layer as a gate electrode over the second tungsten layer to fill the trench, and selectively recessing the third tungsten layer, the second tungsten layer and the first tungsten layer to form a buried gate structure.
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