US Patent 9455214 Wafer frontside-backside through silicon via

A wafer frontside-backside through silicon via and methods of manufacture are disclosed. The method includes forming a plurality of frontside metalized vias into a partial depth of a substrate. The method further includes forming a backside via in the substrate which exposes, from the backside, the plurality of frontside metalized vias. The method further includes forming a metal in the via in contact with the plurality of metalized frontside vias.