US Patent 9455269 Semiconductor memory device

A semiconductor memory device according to an embodiment comprises: a memory cell array, the memory cell array including: a conductive layer, an inter-layer insulating layer, and a conductive line stacked on a semiconductor substrate in a stacking direction; first and second connecting lines that contact the semiconductor substrate and are electrically connected to the conductive line and that extend in the stacking direction; and a columnar body that penetrates the conductive layer and the inter-layer insulating layer in the stacking direction between the first and second connecting lines and that includes a first semiconductor layer, the semiconductor substrate having: a first impurity region to which a first impurity is added at a place of contact with the first connecting line; and a second impurity region to which a second impurity different from the first impurity is added at a place of contact with the second connecting line.