Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 27, 2016
Patent Application Number
14796646
Date Filed
July 10, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a semiconductor device that includes forming a plurality of semiconductor pillars. A dielectric spacer is formed between at least one set of adjacent semiconductor pillars. Semiconductor material is epitaxially formed on sidewalls of the adjacent semiconductor pillars, wherein the dielectric spacer obstructs a first portion of epitaxial semiconductor material formed on a first semiconductor pillar from merging with a second portion of epitaxial semiconductor material formed on a second semiconductor pillar.
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