Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 18, 2016
Patent Application Number
14798996
Date Filed
July 14, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
Some embodiments relate to a method of manufacturing an integrated circuit device. In this method a dielectric layer is formed over a substrate. The dielectric layer comprises an opening arranged within the dielectric layer. A first cobalt liner is formed along bottom and sidewall surfaces of the opening. A barrier liner is formed on exposed surfaces of the first cobalt liner. A bulk cobalt layer is formed in the opening and over the barrier liner to fill a remaining space of the opening.
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