US Patent 9478575 Solid-state image sensor

An image sensor includes a first pixel having a first color filter, a first reflection region which reflects light from the first color filter, and a first photoelectric conversion portion arranged in a semiconductor layer and located between the first color filter and the first reflection region, and a second pixel including a second color filter, a second reflection region which reflects light from the second color filter, and a second photoelectric conversion portion arranged in the semiconductor layer and located between the second color filter and the second reflection region. Wavelength corresponding to a maximum transmittance of the first color filter is shorter than wavelength corresponding to a maximum transmittance of the second color filter. An area of the first reflection region is smaller than area of the second reflection region.