Patent attributes
A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer, N-drift layer and N-type CS layer within the N-drift layer near the top side. Multiple trench structures are formed by polysilicon core and gate oxide layer near the front side. There are active cells and plugged cells on top of the device. The polysilicon cores of the trenches in the active cells are connected to the gate electrode, and the polysilicon cores of the trenches in the plugged cells are connected to the emitter electrode. There are N+ region and P+ region in active cells, and they are connected to metal emitter layer through the window in the insulation layer. There are P-well regions in both active cells and plugged cells. The P-well regions in active cells are continuous and connected to emitter electrode through P+ region. The P-well regions in plugged cells are divided by N-drift layer, forming discontinuous P-type regions along the direction of trenches. And each P-well region in plugged cells is either electrically floating or connected to the emitter electrode.
