Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 25, 2016
Patent Application Number
12993651
Date Filed
May 26, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
A single pulse semiconductor laser operating in the gain-switching regime comprises a plane asymmetric waveguide and an active layer in the waveguide, the ratio of a thickness of the active layer to an optical confinement factor of the laser being extremely large, larger than about 5 μm, for example.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
