Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bui Ngo Bong0
Yong Hun Jeong0
Yen Thing Tay0
Iliyana Manso0
Date of Patent
November 15, 2016
0Patent Application Number
142338350
Date Filed
July 22, 2011
0Patent Primary Examiner
Patent abstract
A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level.
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