Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Atsuo Isobe0
Kunio Hosoya0
Date of Patent
November 15, 2016
0Patent Application Number
148319720
Date Filed
August 21, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.
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