US Patent 9502649 Bottom electrode structure for improved electric field uniformity

An integrated circuit with a multilayer bottom electrode, and a corresponding method for manufacturing the integrated circuit, are provided. An insulating layer includes an opening, and a bottom electrode substantially fills the opening. The bottom electrode includes a plurality of layers laterally or vertically stacked upon each other, and lining the opening. The layers of the plurality include corresponding surfaces facing an interior of the opening and extending respectively at angles relative to a top surface of the bottom electrode. Further, the layers of the plurality include corresponding regions of increased resistance or height extending along the corresponding surfaces. A dielectric layer is arranged over the insulating layer and the bottom electrode, and a top electrode arranged over the dielectric layer.