Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Liang-Yao Lee0
Yung-Che Albert Shih0
Juing-Yi Wu0
Jyh-Kang Ting0
Tsung-Chieh Tsai0
Date of Patent
November 29, 2016
0Patent Application Number
149900160
Date Filed
January 7, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device comprises a non-conductive gate feature over a substrate, and a metal gate electrode over the substrate. The metal gate electrode comprises a portion over an active region of the substrate, and a portion over an isolation feature of the substrate ending at an end cap. A vertical profile of the metal gate electrode at the end cap matches a vertical profile of the metal gate electrode in the portion over the active region.
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