Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shyi-Yuan Wu0
Ching-Lin Chan0
Cheng-Chi Lin0
Date of Patent
December 13, 2016
0Patent Application Number
146254350
Date Filed
February 18, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, and a buried layer having the first conductivity type formed below the high-voltage well and vertically aligned with the drift region.
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