Patent attributes
A set of VCSEL fabrication methods has been invented which enhance the performance and long time reliability of VCSEL devices and arrays of devices. Wafer bow caused by growing a large number of epitaxial layers required to fabricate VCSEL device generates strain and results in bowing/warping of the device wafer. The stress so generated is eliminated by applying a stress compensation layer on the substrate to a surface opposite to the epitaxial layer surface. New oxidation equipment designs and process parameters are described which produce more precision apertures and reduce stress in the VCSEL device. An ultrathin fabrication procedure is described which enables high power VCSELs to be made for high power operation at many different wavelengths. A low temperature electrical contacting process improves VCSEL long term reliability.
