Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shuhei Nagatsuka0
Yoshiyuki Kobayashi0
Yutaka Shionoiri0
Yuto Yakubo0
Shunpei Yamazaki0
Tomoaki Atsumi0
Date of Patent
December 20, 2016
0Patent Application Number
147236300
Date Filed
May 28, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device which occupies a small area is provided. A semiconductor device includes a resistor. The resistor includes a transistor. The increase rate of a drain current of the transistor with a 0.1 V change in drain voltage is preferably higher than or equal to 1% when the drain voltage is higher than a difference between a gate voltage and a threshold voltage of the transistor. The semiconductor device has a function of generating a voltage based on the resistance of the resistor.
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