US Patent 9536788 Complementary SOI lateral bipolar transistors with backplate bias

A complementary bipolar junction transistor (BJT) integrated structure and methods for fabricating and operating such. The structure includes a monolithic substrate and conductive first and second backplates electrically isolated from each other. An NPN lateral BJT is superposed over the first backplate, and a PNP lateral BJT is superposed over the second backplate. A buried oxide (BOX) layer is positioned between the NPN lateral BJT and the first backplate, and between the PNP lateral BJT and the second backplate.