Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kwang Soo Seol0
Taekyung Kim0
Hyunchul Back0
Jin-Soo Lim0
Seong Soon Cho0
Date of Patent
January 24, 2017
0Patent Application Number
142587720
Date Filed
April 22, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device may include gate structures spaced apart above a top surface of a substrate. The gate structures may include a horizontal electrode extending in a first direction parallel with the top surface of a substrate. An isolation insulating layer may be disposed between the gate structures. A plurality of cell pillars may penetrate the horizontal electrode and connect to the substrate. The plurality of cell pillars may include a minimum spacing defined by a shortest distance between any two of the plurality of cell pillars. The thickness of the horizontal electrode may be greater than the minimum spacing of the cell pillars.
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