Patent attributes
A three-dimensional nonvolatile memory device includes a substrate defined with a slimming region, first and second pass regions on both sides of the slimming region, and a cell region adjacent to the slimming region with the first pass region interposed therebetween; a word line stack including a plurality of word lines stacked over the cell region, the first pass region, and the slimming region of the substrate; first wiring lines extending from the slimming region to the first pass region and electrically coupling some word lines with pass transistors formed in the first pass region of the substrate; and second wiring lines extending from the slimming region to the second pass region and electrically coupling remaining word lines, other than the some word lines, with pass transistors formed in the second pass region of the substrate.
