US Patent 9564358 Forming reliable contacts on tight semiconductor pitch

A method of forming a semiconductor device includes forming a trench in a passivating layer between neighboring fins. A barrier is formed in the trench. Conductive contacts are formed in the passivating layer to provide electrical connectivity to the fins. The conductive contacts are in direct contact with sidewalls of the barrier. A semiconductor device includes a passivating layer over a pair of fins. A barrier extends through the passivating layer and between the pair of fins and that electrically isolates the fins. Electrical contacts are formed through the passivating layer to the fins. The electrical contacts directly contact sidewalls of the barrier.