Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shunpei Yamazaki0
Date of Patent
February 7, 2017
0Patent Application Number
146193100
Date Filed
February 11, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.
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