Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kee-won Kim0
Sang-yong Kim0
Sang-hwan Park0
Date of Patent
February 14, 2017
0Patent Application Number
146938520
Date Filed
April 22, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A magnetic device includes a free layer including a first magnetization layer; a pinned layer including a second magnetization layer; and a tunnel barrier layer provided between the free layer and the pinned layer. At least one selected from the free layer and the pinned layer includes a synthetic antiferromagnetic (SAF) structure formed of a first ferromagnetic layer, a second ferromagnetic layer, and a ruthenium-rhodium (Ru—Rh) alloy layer provided between the first and second ferromagnetic layers.
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