Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ansoo Park0
Jung-Seok Hwang0
In-Mo Kim0
Date of Patent
February 21, 2017
0Patent Application Number
145786320
Date Filed
December 22, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A nonvolatile memory device includes a first memory block connected to first word lines, a second memory block arranged in a direction perpendicular to the first memory block and is connected to second word lines, first pass transistors for enabling the first word lines, and second pass transistors for enabling the second word lines. The first and second pass transistors are arranged in a horizontal direction with respect to the first and second memory blocks.
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