Patent attributes
An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material adjacent to a photodiode in the plurality of photodiodes. A transfer gate is disposed to transfer image charge generated in the photodiode into the floating diffusion. A first electrical contact with a first cross sectional area is coupled to the transfer gate. A second electrical contact with a second cross sectional area is coupled to the floating diffusion, and the second cross sectional area is greater than the first cross sectional area. The image sensor also includes pixel transistor region disposed in the semiconductor material including a first electrical connection to the semiconductor material. A third electrical contact with a third cross sectional area is coupled to the first electrical connection to the semiconductor material, and the third cross sectional area is greater than the first cross sectional area.
