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Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chang-Ming Wu0
Harry-Hak-Lay Chuang0
Shih-Chang Liu0
Wei Cheng Wu0
Chin-Yi Huang0
Date of Patent
February 28, 2017
0Patent Application Number
142107960
Date Filed
March 14, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
The present disclosure relates to a method of embedding an ESF3 memory in a HKMG integrated circuit that utilizes a replacement gate technology. The ESF3 memory is formed over a recessed substrate which prevents damage of the memory control gates during the CMP process performed on the ILD layer. An asymmetric isolation zone is also formed in the transition region between the memory cell and the periphery circuit boundary.
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