US Patent 9593421 Particle generation suppressor by DC bias modulation

Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma.