Patent 9595612 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on March, 2017 by the United States Patent and Trademark Office.
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.