US Patent 9601492 FinFET devices and methods of forming the same

FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes a substrate, multiple gates and an insulating wall. The substrate is provided with multiple fins extending in a first direction. The multiple gates extending in a second direction different from the first direction are provided respectively across the fins. Two of the adjacent gates are arranged end to end. The insulating wall extending in the first direction is located between the facing ends of the adjacent gates and is in physical contact with a gate dielectric material of each of the adjacent gates.