Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Alexander Reznicek0
Pouya Hashemi0
Ali Khakifirooz0
Date of Patent
March 28, 2017
0Patent Application Number
149354060
Date Filed
November 7, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A nanowire transistor structure is fabricated by using auxiliary epitaxial nucleation source/drain fin structures. The fin structures include semiconductor layers integral with nanowires that extend between the fin structures. Gate structures are formed between the fin structures such that the nanowires extend through the gate conductors. Following spacer formation and nanowire chop, source/drain regions are grown epitaxially between the gate structures.
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