US Patent 9608075 III-nitride semiconductor device with doped epi structures
Patent 9608075 was granted and assigned to Infineon Technologies on March, 2017 by the United States Patent and Trademark Office.
Is a
Current Assignee
Date Filed
June 3, 2016
0
Date of Patent
March 28, 2017
0
Patent Applicant
Patent Application Number
15173263
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Patent Inventor Names
Jianwei Wan
0
Mihir Tungare
0
Peter Kim
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Scott Nelson
0
Seong-Eun Park
0
Srinivasan Kannan
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Patent Jurisdiction
Patent Number
Patent Primary Examiner
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