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US Patent 9620561 Magnetoresistive element and manufacturing method thereof

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US Patent 12089505 Magnetic memory device
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US Patent 12063869 Magnetic memory device
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Patent abstract

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer.

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US Patent 09620561 Magnetoresistive element and manufacturing method thereof US Patent 9620561 Magnetoresistive element and manufacturing method thereof

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Patent Number
0962056100
Patent Number
962056100
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=0962056100
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
096205610
Date of Patent
April 11, 2017
0
Patent Application Number
146275520
Date Filed
February 20, 2015
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=096205610
Patent Primary Examiner
0
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edited on 25 Sep, 2022
Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
096205610
Date of Patent
April 11, 2017
0
Patent Application Number
146275520
Date Filed
February 20, 2015
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=096205610
Patent Primary Examiner
0
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 US Patent 09620561 Magnetoresistive element and manufacturing method thereof

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09620561
Date of patent
April 11, 2017
Patent application number
14627552
Date Filed
February 20, 2015
Patent primary examiner

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