US Patent 9627268 Method for fabricating semiconductor device
Patent 9627268 was granted and assigned to United Microelectronics Corporation on April, 2017 by the United States Patent and Trademark Office.
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Patent abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure, in which the fin-shaped structure has a top portion and a bottom portion; forming a first doped layer on the STI and the top portion; and performing a first anneal process.
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US Patent 09627268 Method for fabricating semiconductor device US Patent 9627268 Method for fabricating semiconductor device
Infobox
Patent Number
0962726800
Patent Number
962726800
Edits on 30 Mar, 2023
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Infobox
Is a
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
096272680
Date of Patent
April 18, 2017
0Patent Application Number
148847460
Date Filed
October 15, 2015
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
096272680
Date of Patent
April 18, 2017
0Patent Application Number
148847460
Date Filed
October 15, 2015
0Official Website
Patent Primary Examiner
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US Patent 09627268 Method for fabricating semiconductor device
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09627268
Date of patent
April 18, 2017
Patent application number
14884746
Date Filed
October 15, 2015
Patent primary examiner
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