Patent attributes
A method of fabricating a semiconductor device is provided as follows. Epitaxial layers is formed on an active fin structure of a substrate. First metal gate electrodes are formed on the active fin structure. Each first metal gate electrode and each epitaxial layer are alternately disposed in a first direction on the active fin structure. ILD patterns are formed on the epitaxial layers, extending in a second direction crossing the first direction. Sacrificial spacer patterns are formed on the first metal gate electrodes. Each of the plurality of sacrificial spacer patterns covers a corresponding first metal gate electrode of the first metal gate electrodes. Self-aligned contact holes and sacrificial spacers are formed by removing the ILD patterns. Each self-aligned contact hole exposes a corresponding epitaxial layer disposed under each ILD pattern. Source/drain electrodes are formed in the self-aligned contact holes. The sacrificial spacers are replaced with air spacers.
