US Patent 9627537 FinFET device and method of forming the same

Provided is a FinFET device including a substrate having at least one fin, first and second gate stacks, first and second strained layers, a shielding layer and first and second connectors. The first and second gate stacks are across the fin. The first and second strained layers are respectively aside the first and second gate stacks. The shielding layer is over the second gate stack, over a top surface and a sidewall of the first gate stack and discontinuous around a top corner of the first gate stack. The first connector is through the shielding layer and is electrically connected to the first stained layer. The second connector is through the shielding layer and is electrically connected to the second stained layer. Besides, the width of the second connector is greater than the width of the first connector.