Techniques described herein are generally related to metamaterial structures for Q-switching in laser systems. The various described techniques may be applied to methods, systems, devices or combinations thereof. Some described metamaterial structures may include a substrate and a first conductive layer disposed on a first surface of the substrate. A dielectric layer may be disposed on a first surface of the first conductive layer and a second conductive layer having a substantially symmetric geometric shape may be disposed on a first surface of the dielectric layer. The second conductive layer may cover a portion of the first surface of the dielectric layer.