Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kosei Noda0
Yuta Endo0
Yuichi Sato0
Date of Patent
April 25, 2017
0Patent Application Number
144518540
Date Filed
August 5, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region.
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