Patent attributes
Techniques are provided for preventing program disturb when programming a memory device. Hot electron injection program disturb is prevented or reduced. Voltage boosting of the NAND channel of a program inhibited NAND string may be controlled in a manner to reduce or eliminate a lateral electric field that could possibly accelerate electrons in the NAND channel. If the electrons gain enough energy due to the lateral electric field, they could potentially be injected into the charge storage region of a memory cell, thereby causing program disturb. Thus, the voltage boosting can prevent or reduce injection of hot electrons from the NAND channel to a charge storage region of a NAND memory cell during a programming operation, thereby preventing or reducing program disturb.
