Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Daisuke Watanabe0
Makoto Nagamine0
Toshihiko Nagase0
Youngmin Eeh0
Kazuya Sawada0
Koji Ueda0
Date of Patent
May 2, 2017
0Patent Application Number
146452390
Date Filed
March 11, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material.
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