Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazuhiro Ooshima0
Date of Patent
May 16, 2017
Patent Application Number
14927767
Date Filed
October 30, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a structure in which first to N-th insulating layers and first to N-th metal layers are alternately provided on a substrate where N is an integer of two or more. The method further includes processing the first insulating layer. The method further includes forming a first film on a side face of the first insulating layer, the first film containing a first reaction product generated by processing the first insulating layer. The method further includes processing the first metal layer under the first insulating layer, and the second insulating layer under the first metal layer by using the first film as a mask.
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