Patent attributes
A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end, wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium, the phase-tunable waveguide platform comprising: a first resonator and a second resonator; at least one resonator being a phase-tunable resonator; wherein the first resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter; and wherein the second resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter.
