Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kangguo Cheng0
Peng Xu0
Date of Patent
July 11, 2017
0Patent Application Number
152605090
Date Filed
September 9, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating a nanosheet semiconductor structure includes forming a first nanosheet field effect transistor (FET) structure having a first inner spacer of a first material and a second nanosheet FET structure having second inner spacer of a second material. The first material is different than the second material.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
