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US Patent 9705076 Magnetoresistive element and manufacturing method of the same

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Patent Citations Received
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US Patent 12089505 Magnetic memory device
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edited on 14 Aug, 2024
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US Patent 12063869 Magnetic memory device
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edited on 6 Dec, 2023
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Patent abstract

According to one embodiment, there is provided a magnetoresistive element, including a lower electrode having crystallinity on a substrate, a first conductive layer including an amorphous state on the lower electrode, a buffer layer on the first conductive layer, and an MTJ element on the buffer layer.

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Patent Inventor Names
Daisuke Watanabe0
Kazuya Sawada0
Koji Ueda0
Makoto Nagamine0
Masahiko Nakayama0
Toshihiko Nagase0
Youngmin Eeh0
Edits on 23 May, 2023
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edited on 23 May, 2023
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US Patent 09705076 Magnetoresistive element and manufacturing method of the same US Patent 9705076 Magnetoresistive element and manufacturing method of the same

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Patent Number
097050760
Patent Number
97050760
Edits on 21 May, 2023
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edited on 21 May, 2023
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=097050760
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edited on 28 Mar, 2023
Infobox
Is a
Patent
Patent
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
097050760
Date of Patent
July 11, 2017
0
Patent Application Number
144789710
Date Filed
September 5, 2014
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=097050760
Patent Primary Examiner
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Hrayr A Sayadian
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Edits on 15 Jun, 2022
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=09705076
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 US Patent 09705076 Magnetoresistive element and manufacturing method of the same

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09705076
Date of patent
July 11, 2017
Patent application number
14478971
Date Filed
September 5, 2014
Patent primary examiner
‌
Hrayr A Sayadian

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