Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Daniel Kwadwo Amponsah Berkoh0
Dean G. Scott0
Elena Becerra Woodard0
Date of Patent
July 18, 2017
0Patent Application Number
141472010
Date Filed
January 3, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, and focusing the plasma ions using a plasma focusing ring. The plasma focusing ring is configured to increase a flux of plasma ions arriving at a surface of the wafer to control the formation of the plurality of features and structures associated therewith.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.