Patent attributes
Certain embodiments provide a high frequency semiconductor device including a plurality of unit FETs, an input dividing/matching circuit, an output combining/matching circuit, and a low-frequency-oscillation-suppressing-circuit. The input dividing/matching circuit has an input end and a plurality of divided output ends connected to the unit FETs, and is symmetrical about a center axis of the input end. The output combining/matching circuit has an output end and a plurality of divided input ends connected to the unit FETs, and is symmetrical about a center axis of the output end. The low-frequency-oscillation-suppressing-circuit is connected to at least one of the input end of the input dividing/matching circuit and the output end of the output combining/matching circuit.