Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hsuan-Sheng Lin0
Huang-Ren Wei0
Date of Patent
August 1, 2017
0Patent Application Number
150436270
Date Filed
February 15, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
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