US Patent 9721950 Semiconductor device
Patent 9721950 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on August, 2017 by the United States Patent and Trademark Office.
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A semiconductor device including fin type patterns is provided. The semiconductor device includes a first fin type pattern, a field insulation layer disposed in vicinity of the first fin type pattern and having a first part and a second part, the first part protruding from the second part, a first dummy gate stack formed on the first part of the field insulation layer and including a first dummy gate insulation layer having a first thickness, and a first gate stack formed on the second part of the field insulation layer to intersect the first fin type pattern and including a first gate insulation layer having a second thickness different from the first thickness.
US Patent 09721950 Semiconductor device US Patent 9721950 Semiconductor device
US Patent 09721950 Semiconductor device
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