Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 8, 2017
Patent Application Number
14974018
Date Filed
December 18, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.
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