Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shunpei Yamazaki0
Date of Patent
August 15, 2017
Patent Application Number
15086148
Date Filed
March 31, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
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